Low-frequency (LF) analysis is applied to advanced memory devices in order to characterize, quantify and identify defects affecting their performance. In single-transistor (1T) Floating-Body Random Access Memory (FBRAM) on Ultra-thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI), it is shown that the retention time behavior can be explained by the traps giving rise to Generation-Recombination noise. In conventional DRAM technology, the capacitor leakage is one of the most serious showstoppers for scaling down. The analysis of the 1/ƒ noise in the gate leakage current of STO-based DRAM Metal-Insulator-Metal (MIM) capacitors shows a strong impact of the gate stack on the defect density.