A millimeter-wave bond-wire packaging and micro-strip to waveguide transition are proposed for E-band CMOS power amplifiers. A 700μm cavity is used to shorten bond-wire length, and the bond-wire inductance is compensated by micro-strip matching network, realizing a good packaging performance with 0.3dB loss over 30GHz bandwidth. A low-cost Alumina board is used for micro-strip to waveguide transition, without back-cavity or modification of standard waveguide. Two coupling pads are introduced to realize the transition from 71 to 86GHz frequency range. Gain, output power and drain efficiency of a 40nm E-CMOS E-band power amplifier, mounted on the presented package, were measured.