This study presents the results of a high-gain and wideband differential intermediate frequency (IF) amplifier circuit design for a W-band passive imaging single-chip (down-conversion) receiver front-end. The cascaded two-stage IF amplifier was fabricated in a 0.13 μm SiGe BiCMOS process technology with 300 GHz/500 GHz fT/fmax. In total six on-chip inductors are used in the input, output and inter-stage matching networks which enable relatively broadband RF properties together with a compact circuit size for the IF amplifier (the die area is 0.27 mm2 incl. RF and DC pads). The broadband SiGe amplifier has a measured gain of 10–19.5 dB at 2–37 GHz (|s11| and |s22| ≤ −10 dB at 7–40 GHz and 8–35 GHz, respectively), noise figure of 6.3–8.0 dB at 2–26 GHz and output third order intercept points of 7–17 dBm at 1–40 GHz (the DC power consumption is 122 mW). To the authors’ best knowledge, this work reports a first-time realisation of a differential IF amplifier made in a 0.13 μm SiGe BiCMOS technology that achieves such wideband impedance matching together with a high gain and reasonably low noise properties over a wide instantaneous bandwidth (|s21| = 15–19.5 dB at 3–26 GHz).