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This paper reports the design, simulations and measurements of a differential cascode amplifier cell in InP DHBT. From transistor with fT/fmax reaching 370/340 GHz, this circuit is able to provide a bandwidth of more than 110 GHz, with a maximal differential gain of 9 dB at 90 GHz, and a total peaking of 11dB. This circuit constitutes a promising building block for analog equalizer structures dedicated to 100-Gb/s optical communication systems.
III-V Lab, a joint lab between ‘Alcatel-Lucent Bell Labs France’, ‘Thales Research and Technology’ and ‘CEA Leti’ Route de Nozay, 91460 Marcoussis, France
III-V Lab, a joint lab between ‘Alcatel-Lucent Bell Labs France’, ‘Thales Research and Technology’ and ‘CEA Leti’ Route de Nozay, 91460 Marcoussis, France
III-V Lab, a joint lab between ‘Alcatel-Lucent Bell Labs France’, ‘Thales Research and Technology’ and ‘CEA Leti’ Route de Nozay, 91460 Marcoussis, France