In this paper, we demonstrate that the surface recombination velocity of electrons $S_{n0}$ at highly p+-doped silicon surfaces can be quantified using the electron-beam-induced current (EBIC) technique. First, the 3-D electron-beam sample interaction is simulated using CASINO Monte–Carlo software in order to generate the 3-D carrier generation profile. Subsequently, this carrier generation profile is used in Sentaurus Technical Computer-Aided Design device modeling, and the EBIC response is simulated as a function of $S_{n0}$. The simulation results show a near-perfect match with the EBIC measurements obtained on a passivated and depassivated p+-emitter of n-type silicon wafer solar cells. In addition, localized $S_{n0}$ extraction on an area of 30 × 30 nm2 is presented, clearly illustrating the advantage of EBIC as an electron-beam-based characterization technique compared with optical techniques.