This paper explores the effectiveness of error detection schemes in increasingly multiple-cell upset-dominant technologies, specifically SRAM. A review of interleaving distance, parity codes, and well-taps is conducted to examine each attribute. Then, the paper proposes a novel error detection scheme with the harmonious use of the multiple-cell upset inhibition effects of well-taps, the detectability of parity codes, and an interleaving distance scheme to create an effective error detection scheme that is both flexible and has a high implementation prospect. A row depth model is created to assess the effectiveness of the proposed scheme. The model shows that advanced technologies with greater multiple-cell upset sizes and ratios will experience error detection failures with schemes such as single error correction-double error detection, whereas the proposed scheme remains effective. Experimental data supports the premise that well-taps inhibit multiple-cell upset, as it is found that 1% cross well-taps. The proposed scheme is recognized to be at least three times better against error detection failures than single error correction-double error detection.