Recent reports have demonstrated the suitability of ZnO as an interfacial layer for unpinned, low resistance metal-interfacial layer-semiconductor (MIS) contacts on n-Ge from experimental [1] and theoretical standpoints [2, 3]. The doping level in the interfacial layer can significantly impact the contact resistance by controlling the tunnel barrier width. In this work we have compared Al-doped (2%) ZnO (AZO) and Indium tin oxide (ITO, 5% Sn) along with annealed (n+) ZnO interfacial layers reported earlier. All three layers unpin the Fermi level on n-Ge and have nearly similar conduction band offsets (∼-0.1 eV). However ITO-based n-Ge contacts exhibit lower thickness dependence and higher current densities as compared to AZO and ZnO, likely due to the higher doping in the ITO layer. Germanium (Ge) has attracted much interest in recent years as a replacement channel material for Silicon in future logic process technologies. However, issues such as (i) poor gate/channel interface, (ii) low n-type dopant activation, and, (3) Fermi-level (FL) pinning near the conduction band, have made it difficult to incorporate Ge in mainstream technologies. The last two factors lead to high-resistance metal contacts on n-Ge. One way to solve this problem is by introducing a thin interfacial layer (IL) between the metal and Ge (MIS). In addition to the lower barrier height obtained due to FL unpinning, tunneling of carriers across the interfacial layer gives low resistance contacts. More specifically, ZnO has been shown to give low resistance contacts due to its low conduction band offset w.r.t Ge (ΔEc) as well as the possibility of doping it using an anneal [1].