A method for fabrication of junctionless SOI MOS devices for sensor applications is presented in the paper. Two groups of devices, namely FinFET-type devices, and wide MOSFETs have been designed and manufactured in a single process sequence on the same wafer. Electrical measurements of the MOSFETs as well characterization work have been carried out. The characterization work is based on a proposed model of junctionless MOSFETs and is focused on analysis of the symmetry between the resistive lines connecting the transistor active area with the pads.