In our paper “Modeling MOSFET Drain Current Non-Gaussian Distribution with Power-Normal Probability Density Function” <xref ref-type="bibr" rid="ref1">[1]</xref> published in IEEE E<sc>lectron</sc> D<sc>evice</sc> L<sc>etters</sc>, Feburary 2014, the analytic results are derived for power Gaussian distribution (PGD) with integer \(n\) only. It appears to be a limitation in practical application, where one may need non-integer \(n\) for a more accurate model, e.g., \(n=1.5\) . This addendum is to show that our analytic results, without any format change, are also applicable to non-integer \(n\) . Therefore, the integer limitation can be stripped off from our model, which in fact is capable of providing continuous coverage.