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We report on a numerical simulation on <0001> direction and <11–20> direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) Impact-Ionization-Avalanche-Transit-Time (IMPATT) diodes for operation at D-band frequencies. Results show that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The <0001> direction 4H-SiC IMPATT diode exhibits larger breakdown voltage and higher de-to-rf conversion efficiency (η) due to its lower electron and hole ionization rates and higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for <11–20> direction 4H-SiC IMPATT diode. Higher dc-to-rf conversion efficiency and larger breakdown voltage in <0001> direction 4H-SiC IMPATT diode imply its millimeter wave power output higher than <11–20> direction 4H-SiC IMPATT diode.