This paper covers the design of access circuitry for a barrier grid tube temporary memory. The circuitry converts a 14-bit binary address into the analog deflection voltage necessary to deflect the electron beam in the barrier grid tube to a specific geometrical storage area defined by the address. A special feedback circuit and raster reference tube deflected in parallel with the barrier grid tube control the size and centering of the array of storage spots. Novel methods of measurement were developed to certify the accuracy of the deflection system. The system meets the requirements of high speed, accuracy, stability and reliability.