In this paper we propose a strategy to achieve monolithic integration of III–Vs on Si for photonic integration through a simple process. By mimicking the SiO /Si/SiO waveguide necessary to couple light from the gain medium on its top, we adopt a ∼2 μm thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (∼1. 55 μm) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III–Vs and Si on same chip.