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It is shown that low-temperature-grown GaAs photoconductors using a Fabry-Perot cavity are very efficient optical switches in comparison with planar photoconductors. A switching efficiency of about 60% was measured with a pulse energy as low as 1.2 pJ and about 100% efficiency is achieved with a pulse energy of 14.2 pJ. Efficient optical sampling of microwave signals is now achievable with a low power pulsed laser.
Institut d'Electronique, de Microelectronique et de Nanotechnologie, U.M.R. C.N.R.S./Universite de Lille1 8520, Avenue Poincare, BP 60069, 59652 Villeneuve d'Ascq Cedex, France
Institut d'Electronique, de Microelectronique et de Nanotechnologie, U.M.R. C.N.R.S./Universite de Lille1 8520, Avenue Poincare, BP 60069, 59652 Villeneuve d'Ascq Cedex, France