This work presents a piecewise two-dimensional steady-state analytical model for insulated gate bipolar transistor (IGBT). The proposed model can accurately describes the dependence of carrier density profile on the ratio of accumulation gate width (Lg) to the half cell width (Lcell) without ignoring the recombination in the drift region. The drift region of IGBT is divided into four regions in this model. By determining the boundary that separates one- and two-dimensional regions, the carrier density profiles in the four regions can be derived with proper boundary conditions. The model is originally developed for, but not limited to, 4H-SiC p-IGBT. The results of proposed model are in good agreement with the simulation results at varied current densities and with different values of Lg/Lcell. The I–V curves in the linear region generated by the proposed model match well with the simulated results. The error of the amount of stored charge generated by one-dimensional model will also be examined.