In this letter, we experimentally demonstrate enhancement in drive current and reduction in drain-induced barrier thinning (DIBT) in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneling barrier height from 0.58 to 0.25 eV. Moderate-stagger and high-stagger hetj TFETs are fabricated, and their electrical results are compared with the homojunction (homj) TFET . Due to the 57 reduction in , the hetj TFET achieves 253 enhancement in over the homj TFET at and . With electrical oxide thickness (Toxe) scaling from 2.3 to 2 nm, the enhancement further increases to 350 , resulting in a record high of 135 and 65 reduction in DIBT at .