In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube field-effect transistors can be used as active device in integrated circuits, as memory cell in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to extend and eventually replace the traditional planar MOSFET.