This paper presents massive analytical analysis of Bottom Gate Top Contact (BGTC) and Bottom Gate Bottom Contact (BGBC) structures of Organic Thin Film Transistors (OTFTs). It is preferable to have compact dc models that can be used in simulations to forecast and optimize performance of organic material based devices and circuits. Since a unified compact model is not sufficient to derive all characteristics using materials and fabrication processes, therefore, several analytical models have been proposed and subsequently their respective operating modes are described. In order to obtain current-voltage (I–V) characteristics of reliable organic device, OTFT charge drift model has been derived and converted into symmetrical compact dc model by adding subthreshold regime and channel length modulation.