The variation of through-silicon-via (TSV) capacitance caused by nonuniform hot-spot heating can lead to spatial circuit performance variation; this effect is undesirable for 3-D IC design. Hence, stable TSV capacitance is desired to overcome this issue. In this letter, stable TSV capacitance is achieved by utilizing -induced negative fixed charge at the Si–liner interface. This causes a positive shift in the flat-band voltage and results in the TSV operating in the stable accumulation capacitance region within operating voltage of interests ( 0–5 V). The leakage current density of the TSV with layer and PETEOS liner is improved by after annealing in forming gas at 300 for 30 min.