A new output network is introduced for class-E power amplifiers. In the proposed output network two new elements, a capacitor and an inductor, are added which provide a high degree of flexibility in the design process. Simulations using a commercial 0.18 μm CMOS technology show that higher parallel capacitance and higher efficiency in comparison to the conventional class-E power amplifiers can be achieved. A sample design of the proposed power amplifier delivers 19.8 dBm power from a 1V supply voltage to a 50Ω load with 68.4% drain efficiency and 64.8% power added efficiency in 1GHz operating frequency.