In this letter, we present a novel device, the germanium electron–hole (EH) bilayer tunnel field-effect transistor, which exploits carrier tunneling through a bias-induced EH bilayer. The proposed architecture provides a quasi-ideal alignment between the tunneling path and the electric field controlled by the gate. The device principle and performances are studied by 2-D numerical simulations. This device allows interesting features in terms of low operating voltage ( 0.5 V), due to its super-steep subthreshold slope over six decades of current), ratio of , and drive current of at . The same structure with symmetric voltages can be used to achieve a p-type device with and levels comparable to the n-type, which enables a straightforward implementation of complementary logic that could theoretically reach a maximum operating frequency of 1.39 GHz when .