The AgInS2 polycrystalline films were grown on glass substrates by using sulfurization of evaporated metal precursors. New procedures for the growth of AgInS2 films are presented. The influences of [Ag]/[In] molar ratio in the precursor films on structural, optical, electrical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of polycrystalline structures of AgInS2 phase in these films. The band gaps and carrier densities of these samples determined from transmittance spectra and electrochemical analysis are in the range of 1.92~1.94 eV, and 3.2×1020~4.0×1020 cm-3, respectively. The flat band potentials of these samples are located between -0.83 and -1.10 V versus normal hydrogen electrode with the Mott-Schottky measurements. The maximum photocurrent density of samples prepared in this study with external potential kept at +1.0 V (vs. Ag/AgCl electrode) was found to be 4.4 mA/cm2 under the illumination with white light intensity kept at 100 mW/cm2.