This paper presents a high performance 0.18 μm PMOS technology based on the use of lowly doped SiGe channel, aiming at high mobility, together with a P+ Poly-SiGe gate for Vth adjustment. Both features are tested separately and their integration is evaluated. First, a 285 mV shift in ϕms is obtained by incorporating Ge fractions up to 55% in P+ polysilicon gates, which should allow further Vth and Ioff current adjustments. Finally, assuming a constant Ioff current, a 40% gain in the saturation current is demonstrated for 0.18 μm SiGe devices compared to conventional ones.