SF6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO2:F). SnO2:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH3)4) and O2 with SF6 between 500??C and 650??C and 10-65 mol% SF6. These were compared to un-doped SnO2 and SnO2:F grown with CBrF3. SF6 required higher thermal activation than CBrF3. High electron mobility (~40 cm2/V-s) and low resistance (6.5??10-3 ??-cm) were achieved with SF6 at ??600??C. at 550??C and below, mobility was on the order of 4 cm2/V-s. Carrier concentrations were on the order of 1019 cm-3, compared to 1020 cm-3 for CBrF3 doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF6 generated films of different crystal structure than CBrF3. SIMS Showed a uniform F concentration of 1.5??1019 atom/cm3 from SF6, but SF6 did not incorporate as much F into the films as CBrF3 (7.5??1020 atoms/cm3). Sulfur contamination was not found.