Process integration of RF MEMS switches with MMIC pHEMT devices and passive components on GaAs has been developed. Measurement results of the RF MEMS switches showed a Cdown/Cup ratio of approximately 20:1, pHEMT devices with gate periphery of 1.2 mm show an Imax of 400 mA/mm, with fT and fmax of 60 GHz and 100 GHz, respectively. TaN resistors were measured at 65 ??/?? sheet resistance, the MIM capacitors have a capacitance of 550 pF/mm2 and the 5 turn spiral inductors have approximately 4.3 nH inductance.