This study proposes composite-collector double heterojunction bipolar transistors (CC-DHBTs) made by low-pressure metamorphic organic chemical vapor deposition (LP-MOCVD). Both V-shaped behaviors (observed in dc current gain, beta, against collector current, IC, and in offset voltage, VCE,offset, against base current, IB, plot) of the asymmetric CC-DHBT are studied. At high IC, the presented CC-DHBTs improve the dc current gain temperature stability relative to most HBTs described in the literature. Additionally, unlike that of the abrupt DHBTs in the literature, the beta of the CC-DHBTs is independent of VCB, suggesting that the effect of the conduction-band barrier in the base-collector junctions may haven been eliminated. An analytical expression for the variation of VCE,offset with IB has been developed. Additionally, unlike that of the unpassivated and SiNx-passivated devices, the beta of the sulfur-treated device is fairly constant over five decades of IC. The difference betreen these variously treated devices is remarkable. X-ray photoelectron spectroscopy was applied to study InGaAs surfaces that were (NH4)2Sx and SiNx passivated. The results demonstrate that passivation effectively suppresses the oxidation of As.