The statistical behaviors of the critical current (I c) and the normal conductance (G n) of high-T c dc SQUIDs were investigated theoretically and experimentally. The voltage-current and voltage-flux characteristics of 38 SQUIDs fabricated on a chip were measured by using a switching-channel cryostat, which can characterize up to 43 elements individually in a series array. It was found that the spatial correlation in I c between the neighboring SQUIDs is low, which implies that the critical current can be taken as a spatially independent random variable. The I c and G n histograms follow the gamma distributions. In addition, the statistical linear correlation between lnI c and lnG n is 0.6, which suggests that the I c spread is partly originated from the variation in local oxygen content of bicrystal junctions.