We report the quantitative characterization of strain components in semiconductor heterostructures of silicon-germaniums (Si0.76Ge0.24) grown on Si substrate with an inserted Ge layer by an ultrahigh vacuum chemical vapor deposition system. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis. The numerical moire method was applied to visualize the lattice fringe surrounding the defects. The strain components epsivxx, epsivyy, epsivxyof interfaces and defects were mapped, respectively. The strain was about 3% in the interface region.