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Source

IEEE Microwave and Wireless Components Letters > 2008 > 18 > 8 > 566 - 568

Abstract

Identifiers

journal ISSN : 1531-1309
journal e-ISSN : 1558-1764
DOI 10.1109/LMWC.2008.2001025

Authors

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Turner, S.E.

  • BAE Syst., Nashua, NH

Chan, R.T.

  • BAE Syst., Nashua, NH

Feng, J.T.

  • BAE Syst., Nashua, NH

Keywords

read-only storage direct digital synthesis heterojunction bipolar transistors III-V semiconductors indium compounds microwave bipolar transistors InP ROM-based direct digital synthesizer DHBT technology DDS heterojunction bipolar transistor technology ROM-based phase converter spurious free dynamic range frequency 24 GHz power 19.8 W Clocks Frequency synthesizers Indium phosphide Circuit testing DH-HEMTs Double heterojunction bipolar transistors Circuit synthesis Frequency measurement Dynamic range Frequency control read-only memory (ROM) Accumulator digital to analog converter (DAC) direct digital synthesizer (DDS) emitter coupled logic (ECL) heterojunction bipolar transistor (HBT) high-speed integrated circuits Indium Phosphide (InP)

read-only storage direct digital synthesis heterojunction bipolar transistors III-V semiconductors indium compounds microwave bipolar transistors InP ROM-based direct digital synthesizer DHBT technology DDS heterojunction bipolar transistor technology ROM-based phase converter spurious free dynamic range frequency 24 GHz power 19.8 W Clocks Frequency synthesizers Indium phosphide Circuit testing DH-HEMTs Double heterojunction bipolar transistors Circuit synthesis Frequency measurement Dynamic range Frequency control read-only memory (ROM) Accumulator digital to analog converter (DAC) direct digital synthesizer (DDS) emitter coupled logic (ECL) heterojunction bipolar transistor (HBT) high-speed integrated circuits Indium Phosphide (InP)

Additional information

Data set: ieee

Publisher

IEEE

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