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We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both electrical and optical confinement.
EPSRC National Centre for III-V Technologies, Department of Electronic&Electrical Engineering, Centre for Nanoscience&Technology, The University of Sheffield, North Campus, Broad Lane, S3 7HQ, U.K.
EPSRC National Centre for III-V Technologies, Department of Electronic&Electrical Engineering, Centre for Nanoscience&Technology, The University of Sheffield, North Campus, Broad Lane, S3 7HQ, U.K.
EPSRC National Centre for III-V Technologies, Department of Electronic&Electrical Engineering, Centre for Nanoscience&Technology, The University of Sheffield, North Campus, Broad Lane, S3 7HQ, U.K.
EPSRC National Centre for III-V Technologies, Department of Electronic&Electrical Engineering, Centre for Nanoscience&Technology, The University of Sheffield, North Campus, Broad Lane, S3 7HQ, U.K.