A new volume-surface electric field integral equation (VSIE) formulation based on the method of moments is presented. The new modeling method uses RWG basis functions on the conductor surface, and volume RWG (VRWG) basis functions in the dielectric region of a MCD object, but the basis functions defined over the boundary tetrahedrons adjoining the conductor surface are modified into nonlinear basis functions so that the tangential component of electric field at the conductor-dielectric interface vanishes. Not only can the new basis functions satisfy the boundary condition well at the conductor-dielectric interface, but also they are suitable for modeling those MCD structures with sharp-angle dielectric parts at the conductor-dielectric interface.
