The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
This paper describes a low voltage low noise amplifier (LNA), designed using 0.35??m SiGe BiCMOS process, targeting a center frequency of 5.8GHz with a voltage supply 1.2V. A power gain of 12.1dB at 5.8GHz has been achieved with a low power consumption of 3.8mW, including all biasing circuitry. The overall noise figure of the LNA is 3dB with both input and output impedance matched to 50??.