The new MOSFET-generation with SiC-materials seems well suited for power electronics converters up to 1200 V operating-voltage, and particularly for grid-feeding solar-inverters. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V SiC DMOSFET samples.