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This work focuses on the fabrication and characterisation of DFB laser diodes operating around 2.6-2.65 μm. The laser structure is realized with a 1 μm-thick active region based on two Ga0.57In0.43As0.11Sb0.89 16 nm-thick compressively strained quantum wells embedded between a barrier and a waveguide made of Al0.30Ga0.70As0.03Sb0.97. The laser operate in the continuous-wave regime at room temperature with a threshold current of about 100 mA at 20°C and a characteristic temperature of 57 K. A single frequency emission is obtained between 2.6 μm and 2.65 μm with a side mode suppression ratio reaching 25 dB and a continuous tuning of 2 nm.