The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which uses a semi-insulating InP base structure current confinement layer formed by OMVPE. Pulsed threshold currents as low as 14 mA and median aging rate under 60?C, 3 mW per facet burn-in conditions of 1% per thousand hours have been measured. A bandwidth greater than 4 GHz and modulation at rates as high as 20 Gbit/s have been achieved.