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A novel structure for a very small area In0.53 Ga0.47As/InP phototransistor on a semi-insulating InP substrate is proposed for single-mode fibre optic communication applications. An optical gain of 38 at 64 ?W incident power was measured on the first batch of unoptimised devices. The emitter-base and base-collector junction areas were 50 and 100 ?m2 respectively. Pulse response measurements using a picosecond dye laser indicated a rise time of 100 ps and a FWHM of 180 ps.