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High-purity undoped InP epitaxial layers (ND ? NA = 5 ? 1014 cm?3, ?77?105 cm2/Vs) are grown by low-pressure metalorganic chemical vapour deposition. The carrier concentrations decrease and the electron mobilities increase as the growth temperature decreases from 700?C to 575?C and the mole fraction ratios ([PH3]/[In(C2H5)3]) increase from 29 to 290.