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A novel ohmic contact 96% Au-4% Mn has been established for p-type GaAs. A specific contact resistivity of 2 ? 10?7 ?cm2 has been obtained on 2 ? 1019 cm?3 epitaxial layers after alloying, and a resistivity of 2 ? 10?6 ?cm2 has been obtained on 2 ? 1020 cm?3 doped layers without alloying. The contact is stable and reproducible.