The first electron and hole sub-band energies of lattice-matched and strained-layer superlattices using the InxGayAl1-x-yAs and In1-xGaxAs alloys, respectively, have been calculated. The results indicate that devices operating at ˜ 1.1 to 1.5 μm can be fabricated with such periodic and biperiodic structures. Calculations using the miniband parameters and materials characteristics indicate that avalanche photodiodes with χ/β≅ 3-5 can be made with these multiple heterostructure layers.