The MOS-HBT-NDR device is made of metal-oxide-semiconductor field-effect-transistor (MOS) and heterojunction bipolar transistor (HBT) devices, but it can show the negative-differential-resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The authors demonstrate a five-valued logic circuit using the two-peak MOS-HBT-NDR circuit as the driver and another two-peak MOS-HBT-NDR circuit as the load. The design and simulation is based on the technique of the standard 0.35mum SiGe process