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This work describes the study of three different electrode metallizations with the aim to form the Schottky barrier contact. As a substrates bulk LEC SI InP grown by Fe and Fe+Zn co-doping wafers are used. Results of the study show that no one of used metallizations performs expected blocking behaviour. However detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV (in FWHM) and the charge collection efficiency higher than 83% for 122 keV y-photons at lowered temperature of 255 K