In this paper the design of three-way travelling-wave divider/combiner is presented. The scheme proposed allows combining power microwave FETs. Combined circuits' topologies are shown with various substrates. Divider and combiner have been designed on 0.5 mm-thick alumina substrates. Input and output transmission lines have been used as matching capacitors and have been designed on 0.3 mm-thick substrates with epsiv=80. GaAs MESFET consists of 8 partial transistors with gate dimensions of 1680 mumtimes.25 mum. Theoretical performance specifications of the scheme are as follows: output power>16 W, gain factor>6.5 dB, input VSWR 1.1-1.6, output VSWR 1.8-2.0