The influences of post-deposition annealing in N/sub 2/ or H/sub 2/S atmosphere on film properties including cell performance were investigated to establish the electrodeposition technique as a method of CuInS/sub 2/-based solar cell fabrication. The single phase CuInS/sub 2/ films with improved crystallinity could be obtained by H/sub 2/S annealing of one-step electrodeposited Cu-In-S precursors. The film composition and surface morphology were hardly changed at the temperature of 200 /spl sim/ 600/spl deg/C. The best cell efficiency of 1.12% (V/sub oc/=0.456, l/sub sc/=8.74, F.F. =0.281) was obtained for the first time by using CuInS/sub 2/-based solar cell prepared from the one-step electrodeposited precursor.