The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Data are presented describing strained-layer distributed Bragg reflector (DBR) InGaAs/GaAs laser diodes operating at lambda =1083nm with single transverse and longitudinal mode behaviour beyond 200mW CW. The threshold current of these lasers is approximately 30mA, with a differential quantum efficiency of 65 %. The total efficiency is 27% at an output power of 100mW. The thermal and current tuning is approximately 0.8 AA/deg and 0.02-0.04 AA/mA, respectively.<<ETX>>