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A selfaligned refractory gate HIGFET technology is described. A three-layer resist process has been used for gate TiPtAu thickening, making high-speed digital structures compatible with low noise microwave applications. Pseudomorphic HIGFETs with 0.2 mu m gate length exhibit a maximum transconductance of 600 mS/mm and a maximum oscillation frequency f/sub max/ of 100 GHz.<<ETX>>