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The first fabrication is reported of a buried ridge structure Ga/sub 0.8/In/sub 0.2/As/GaAs/Ga/sub 0.51/In/sub 0.49/P laser emitting at 0.98 mu m grown by two-step low pressure metal organic chemical vapour deposition. The width of the ridge is 2 mu m. Laser output power greater than 40 mW with a threshold current of 30 mA has been measured. A typical quantum efficiency of eta =60% was obtained without any facet coating. Excellent homogeneity and uniformity have been achieved over a wafer area of 10 cm/sup 2/.<<ETX>>