The generation of high-efficiency CuInSe/sub 2//(CdZn)S solar cells using CuInSe/sub 2/ thin films deposited by elemental evaporation in a two-step process is presented. The substrate temperature of the first deposition which is less than 350 degrees C, reduced the growth defect height to less than 3 mu m. The surface structure of the as-grown CuInSe/sub 2/ films can further be modified by etching in an aqueous bromine solution yielding a specular surface. Specular films provide suitable substrates for high-efficiency ( eta >9%) single and multijunction devices and are used to demonstrate the uniformity of the bulk properties of CuInSe/sub 2/ films deposited in two steps.<<ETX>>