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The authors investigated the effectiveness of the T/sup 3/ (thin-tapered thickness active layer) structure in reducing the carrier density in the active layer as well as the optical density near the mirror. 780 nm AlGaAs lasers with this structure have been operating under 50 degrees C, 30 mW CW (continuous wave) conditions over 10/sup 4/ h with little degradation. The minimal degradation rate is about 0.45%/10/sup 3/ h.<<ETX>>