A novel high-density, high-frequency power MOSFET structure fabricated using selectively deposited LPCVD tungsten on gate polysilicon and source contact regions is reported. The gate-to-source isolation was provided by anisotropically etched phosphosilicate glass (PSG) spacers. Using this technology, the author has successfully fabricated 30 V power DMOS FETs with excellent high-frequency switching performance in terms of low specific on-state resistance R/sub sp/=0.5 m Omega cm/sup 2/, low specific input capacitance C/sub sp/=43 nF/cm/sup 2/, and high switching speed: t/sub on/ and t/sub off/<2 ns. These results represent the first successful demonstration of complex device structures fabricated using LPCVD tungsten derived process technology.<<ETX>>