A novel sputter-deposited Al-Si-Pd alloy has been investigated for use for VLSI interconnection in place of Al-Si-Cu-alloy. Workability of the Al-Si-Pd alloy in submicron patterning has proved to be much better than that of Al-Si-Cu alloy, and both electromigration resistance and stress-induced migration resistance are higher than those of Al-Si-Cu alloy. Long-term reliability tests of a resin-molded 1.3- mu m-process MOS device using Al-Si-Pd alloy have given satisfactory results.<<ETX>>