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Standard planar silicon detectors of 2kΩcm resistivity were irradiated with 7-10MeV protons up to fluences of 7x10 13 p/cm 2 . The effects of proton irradiation on the effective doping concentration (N eff ) and leakage current (I vol ) as a function of fluence were investigated. The evolution of N eff and I vol as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24GeV/c protons. The hardness factors for 7-10MeV protons are extracted.